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STB80NF55L-06中文资料意法半导体数据手册PDF规格书
STB80NF55L-06规格书详情
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark
able manufacturing reproducibility.
■ TYPICAL RDS(on) = 0.005 Ω
■ LOW THRESHOLD DRIVE
■ LOGIC LEVEL DEVICE
■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
产品属性
- 型号:
STB80NF55L-06
- 功能描述:
MOSFET N-Ch, 55V-0.005ohms 80A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
24+ |
TO-263-3 |
16900 |
原装,正品 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
24+ |
TO-263 |
504091 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
STM |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ST/意法半导体 |
24+ |
TO-263-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
24+ |
TO-263-3 |
16960 |
原装正品现货支持实单 |
询价 |