N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件：588.5 Kbytes 页数：19 Pages

STMICROELECTRONICS

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丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：313.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

文件：1.03153 Mbytes 页数：16 Pages

STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.04005 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

文件：1.03153 Mbytes 页数：16 Pages

STMICROELECTRONICS

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N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.04003 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\nLow input capacitance and gate charge\n100% avalanche tested\nExtremely high dv/dt and avalanche capabilities\nLow gate input resistance;

ST

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N-channel 500 V, 300 mOhm typ., 12 A MDmesh Power MOSFET in a D2PAK package

ST

意法半导体