N-channel 500 V, 0.29 廓, 11 A, FDmesh??II Power MOSFET (with fast diode), D2PAK, DPAK

Description FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced on resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. ■ 100 avalanche tested ■ Low i

文件：584.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：B12NM50；Package：D2PAK；N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：115.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

文件：358.36 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：313.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件：588.5 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.04006 Mbytes 页数：8 Pages

VBSEMI

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