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C3060

TYPECMP

2C18SOLIDBCFLEXOASFLEXTYPECMP/CL3P

GENERALGeneral Electric

通用电气公司美国通用电气公司

CA3060

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

HARRIS corporation

CA3060

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

HARRIS corporation

CBD3060LCT

LOWVFSCHOTTKYRECTIFIER

PANJITPANJIT International Inc.

强茂強茂股份有限公司

CBRX3060CT

TrenchSchottkyBarrierRectifier

Good-Ark

Good-Ark

CC3060C-AZ

3-phase3-line500VACAvailable5-150AForoutputlineonly

SOSHINSOSHIN

双信电机双信电机株式会社

CEB3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,14A,RDS(ON)=7.8mΩ@VGS=10V. RDS(ON)=11.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEM3060

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CEP3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU3060

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CEU3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEXPRESS-BW-N3060

COMExpressCompactSizeType6Module

AdlinkAdvance Technologies

AdlinkAdvance Technologies

CHM3060JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT14Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO

CHENMKO

产品属性

  • 产品编号:

    ST3060D

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 包装:

    散装

  • 二极管配置:

    1 对串联

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io)(每二极管):

    15A

  • 速度:

    标准恢复 >500ns,> 200mA(Io)

  • 工作温度 - 结:

    -65°C ~ 200°C

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-204AA,TO-3

  • 供应商器件封装:

    TO-204AA(TO-3)

  • 描述:

    STD RECTIFIER

供应商型号品牌批号封装库存备注价格
Microchip Technology
24+
TO-204AA,TO-3
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
村田
30000
一级代理 原装正品假一罚十价格优势长期供货
询价
Altera
22+
1
183
终端可免费供样,支持BOM配单
询价
Altera
23+
1
8000
只做原装现货
询价
PJ
22+
DIP8
36084
原装正品现货,可开13个点税
询价
ST
1904+
SOP8
3000
自家现货!原装特价供货!一片起卖!
询价
ST(意法)
2002
SOP8
65000
原装正品假一罚万
询价
ST
2023+
SOP8
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
ST
21+
SOP8
35400
全新原装现货/假一罚百!
询价
RFMD
23+
SSOP28
69820
终端可以免费供样,支持BOM配单!
询价
更多ST3060D供应商 更新时间2024-5-27 15:00:00