P Channel Enchancement Mode MOSFET

DESCRIPTION The ST2303 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appl

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STANSON

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P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：490.73 Kbytes 页数：9 Pages

VBSEMI

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P Channel Enchancement Mode MOSFET

Stanson

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P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：491.97 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P Channel Enhancement Mode MOSFET

DESCRIPTION ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

文件：204.9 Kbytes 页数：6 Pages

STANSON

司坦森

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：491.76 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P Channel Enhancement Mode MOSFET

文件：204.9 Kbytes 页数：6 Pages

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Stanson

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