N Channel Enhancement Mode MOSFET

DESCRIPTION The ST2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli

文件：150.22 Kbytes 页数：8 Pages

STANSON

司坦森

N Channel Enhancement Mode MOSFET 3.5A

DESCRIPTION\nThe ST2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicati

Stanson

司坦森

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：493.29 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.025589 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N Channel Enhancement Mode MOSFET

文件：623.39 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商