ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage ap

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STANSON

司坦森

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：482.54 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Tranch MOSFET

Stanson

司坦森

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

文件：1.0929 Mbytes 页数：16 Pages

TRIQUINT

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

文件：1.0929 Mbytes 页数：16 Pages

TRIQUINT

PIN DIODE

Description UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less tha

文件：185.04 Kbytes 页数：5 Pages

MICROSEMI

美高森美