PIN DIODE

Description UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less tha

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Microsemi

美高森美

Silicon & GaAs PIN Diodes

Microchip

微芯科技

Silicon & GaAs PIN Diodes

Microchip

微芯科技

L-BAND VCO LOCAL BUFFER AMPLIFIER

文件：58.3 Kbytes 页数：10 Pages

NEC

瑞萨

GaAs HBT INTEGRATED CIRCUIT

FEATURES • Operation frequency : fopt1 = 679 to 768 MHz (720 MHz TYP.) : fopt2 = 1 270 to 1 371 MHz (1 320 MHz TYP.) • Supply voltage : VCC = 2.7 to 2.9 V (2.8 V TYP.) • Low current consumption : ICC = 3.5 mA TYP.@ VCC = 2.8 V • Excellent isolation : ISL1 = 40 dB TYP. @ fopt1 = 720 MHz, Pin =

文件：227.46 Kbytes 页数：13 Pages

RENESAS

瑞萨

N-CHANNEL ENHANCEMENT MODE

■ DESCRIPTION The UT2304 is an N-Channel Power MOSFET that can achieve the lowest possible on-resistance, extremely and cost-effectiveness device by using advanced trench technology.

文件：229.24 Kbytes 页数：5 Pages

UTC

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