High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lo

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STMICROELECTRONICS

意法半导体

丝印：13009-L；Package：TO-220；High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology fo

文件：166.43 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

SCHOTTKY RECTIFIER

Features  175 C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：237.18 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

High voltage fast-switching NPN power transistor

文件：240.1 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：240.1 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：234.22 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：234.22 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

SCHOTTKY RECTIFIER

文件：211.16 Kbytes 页数：5 Pages

SMC

桑德斯微电子

高压快速切换NPN功率晶体管

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed;

ST

意法半导体

高压快速切换NPN功率晶体管

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. • Low spread of dynamic parameters \n• Minimum lot-to-lot spread for reliable operation \n• Very high switching speed;

ST

意法半导体