SST12LP19E中文资料2.4 GHz High-Power, High-Gain Power Amplifier数据手册Microchip规格书

描述 Description

The SST12LP19E is a 2.4 GHz high-efficiency Power Amplifier based on the highlyreliable InGaP/GaAs HBT technology and designed in compliance with IEEE 802.11b/g/n applications. It typically provides 25 dB gain with 34% power-addedefficiency, while meeting 802.11g spectrum mask at 23.5 dBm. The SST12LP19E also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin, and is offered in both a 6-contact XSON and 8-contact XSON package.

特性 Features

Excellent RF Stability with Moderate Gain:– Typically 25 dB gain across 2.4 – 2.5 GHz
High linear output power:– >26 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 23.5 dBm– ~2.5% added EVM up to 18 dBm (high-efficiency configuration) or ~3% added EVM up to 19.5 dBm (highpowerconfiguration) for 54 Mbps 802.11g signal– 17 dBm at 1.8% EVM, 802.11ac, 256 QAM, 2.4 GHz– Meets 802.11b ACPR requirement up to 23 dBm
High power-added efficiency/Low operating currentfor 802.11b/g/n applications– ~34%/200 mA@POUT = 23.5 dBm for 802.11g– ~31%/195 mA@POUT = 23 dBm for 802.11bApplications
WLAN (IEEE 802.11b/g/n/ac)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment

简介

SST12LP19E属于RF/IF射频/中频RFID的射频放大器。由制造生产的SST12LP19E射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。