SST12LP15A中文资料2.4 Ghz Power Amplifiers数据手册Microchip规格书

描述 Description

The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band, it typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting 802.11g spectrum mask at 25 dBm. The power amplifier IC features easy board-level usage along with high-speed power-up/down control and is offered in 16-contact VQFN package.

特性 Features

•High Gain:– Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C
•High linear output power:– >29 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 25 dBm– Added EVM~4% up to 23 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 25 dBm
•High power-added efficiency/Low operating current for both 802.11g/b applications– ~26%/300 mA @ POUT = 24 dBm for 802.11g– ~27%/350 mA @ POUT = 25 dBm for 802.11bApplications:
•WLAN (IEEE 802.11b/g/n)
•Home RF
•Cordless phones
•2.4 GHz ISM wireless

简介

SST12LP15A属于RF/IF射频/中频RFID的射频放大器。由制造生产的SST12LP15A射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。