SST12LP15B中文资料2.4 Ghz Power Amplifiers Products数据手册Microchip规格书

描述 Description

The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, it typically provides 32 dB gain with 34% power-added efficiency. The SST12LP15B has excellent linearity while meeting 802.11g spectrum mask at 24dBm. The SST12LP15B also features easy board-level usage along with highspeed power-up/down control through a single combined reference voltage pin and is offered in both 16-contact VQFN and 12 contact XQFN packages.

特性 Features

•High Gain:– More than 32 dB gain across 2.4–2.5 GHz over temperature-40°C to +85°C
•High linear output power:– >29 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 26 dBm– ~3% added EVM up to 23 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 25.5 dBm
•High power-added efficiency/Low operating current for 802.11b/g/n applicationsApplications
•WLAN (IEEE 802.11b/g/n)
•Home RF
•Cordless phones
•2.4 GHz ISM wireless equipment

简介

SST12LP15B属于RF/IF射频/中频RFID的射频放大器。由制造生产的SST12LP15B射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。