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SST12LP17E数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

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厂商型号

SST12LP17E

参数属性

SST12LP17E 封装/外壳为8-XFDFN 裸露焊盘;包装为卷带(TR);类别为RF/IF射频/中频RFID的射频放大器;产品描述:IC AMP 802.11B/G/N 2.4GHZ 8X2SON

功能描述

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
IC AMP 802.11B/G/N 2.4GHZ 8X2SON

封装外壳

8-XFDFN 裸露焊盘

制造商

Microchip Microchip Technology

中文名称

微芯科技 微芯科技股份有限公司

数据手册

原厂下载下载地址下载地址二

更新时间

2025-8-10 17:02:00

人工找货

SST12LP17E价格和库存,欢迎联系客服免费人工找货

SST12LP17E规格书详情

描述 Description

The SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module based on the highly-reliable InGaP/GaAs HBT technology and designed incompliance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added efficiency. The SST12LP17E has excellent linearity while meeting802.11g spectrum mask at 21.5 dBm. The SST12LP17E also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin, and is offered in an 8-contact USON package.

特性 Features

•Input/Output ports internally matched to 50Ω and DC decoupled
•High gain:– Typically 28 dB gain across 2.4–2.5 GHz
•High linear output power:
•  >24 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 21.5 dBm
•  ~3% added EVM up to 18 dBm for 54 Mbps 802.11g signal
•  Meets 802.11b ACPR requirement up to 22 dBm
•High power-added efficiency/Low operating current for both 802.11b/g/n applications
•  ~28%/138 mA @ POUT = 21.5 dBm for 802.11g
•  ~33%/155 mA@POUT = 22.5 dBm for 802.11bAPPLICATIONS
Applications
•WLAN (IEEE 802.11b/g/n)
•Home RF
•Cordless phones
•2.4 GHz ISM wireless equipment

简介

SST12LP17E属于RF/IF射频/中频RFID的射频放大器。由制造生产的SST12LP17E射频放大器在射频应用中,射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于,它们通常适用于更高的频率,更倾向于提供不可调节的固定增益,并且输入或输出阻抗值符合常用传输线特性阻抗。

技术参数

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  • 制造商编号

    :SST12LP17E

  • 生产厂家

    :Microchip

  • Status

    :Mature Product

  • 5K Pricing

    :Call for pricing

  • Description

    :50 Ohm Fully Matched High Efficiency IEEE 802.11 b/g/n PAM

  • Packages

    :Please call for package information

  • Type

    :Power Ampllifier

  • Gain

    :29

  • Linear Power

    :18

  • Voltage (V)

    :2.75 - 4.2

  • Frequency GHz

    :2.4 - 2.4

  • Technology

    :InGaP/GaAs HBT

供应商 型号 品牌 批号 封装 库存 备注 价格
SST
25+
SMD
880000
明嘉莱只做原装正品现货
询价
SST
24+
SMD
7671
原装正品.优势专营
询价
Microchip
25+
原厂原装
16000
原装优势绝对有货
询价
MICROCHIP
23+
X2SON8
10000
公司只做原装,可来电咨询
询价
MICROCHIP/微芯
22+
X2SON8
20000
原装现货,实单支持
询价
微芯/麦瑞
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
SST
23+
SMD
35200
只做原装主打品牌QQ询价有询必回
询价
MICROCHIP/微芯
2447
DFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MicrochipTechnology
24+
原厂原装
6000
进口原装正品假一赔十,货期7-10天
询价
21+
X2SON8
4697
原装现货假一赔十
询价