SST12LP17E中文资料2.4 GHz High-Efficiency, High-Gain Power Amplifier Module数据手册Microchip规格书

描述 Description

The SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module based on the highly-reliable InGaP/GaAs HBT technology and designed incompliance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added efficiency. The SST12LP17E has excellent linearity while meeting802.11g spectrum mask at 21.5 dBm. The SST12LP17E also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin, and is offered in an 8-contact USON package.

特性 Features

•Input/Output ports internally matched to 50Ω and DC decoupled
•High gain:– Typically 28 dB gain across 2.4–2.5 GHz
•High linear output power:
•  >24 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 21.5 dBm
•  ~3% added EVM up to 18 dBm for 54 Mbps 802.11g signal
•  Meets 802.11b ACPR requirement up to 22 dBm
•High power-added efficiency/Low operating current for both 802.11b/g/n applications
•  ~28%/138 mA @ POUT = 21.5 dBm for 802.11g
•  ~33%/155 mA@POUT = 22.5 dBm for 802.11bAPPLICATIONS
Applications
•WLAN (IEEE 802.11b/g/n)
•Home RF
•Cordless phones
•2.4 GHz ISM wireless equipment

简介

SST12LP17E属于RF/IF射频/中频RFID的射频放大器。由制造生产的SST12LP17E射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。