SST12LF02中文资料2.4 GHz High-Gain, High-Efficiency Front-end Module数据手册Microchip规格书

厂商型号 |
SST12LF02 |
参数属性 | SST12LF02 封装/外壳为16-VFQFN 裸露焊盘;包装为剪切带(CT)Digi-Reel® 得捷定制卷带;类别为RF/IF射频/中频RFID的射频前端(LNA+PA);产品描述:IC AFE WLAN 11B/G/N 16XQFN |
功能描述 | 2.4 GHz High-Gain, High-Efficiency Front-end Module |
封装外壳 | 16-VFQFN 裸露焊盘 |
制造商 | Microchip Microchip Technology |
中文名称 | 微芯科技 美国微芯科技公司 |
数据手册 | |
更新时间 | 2025-9-27 9:22:00 |
人工找货 | SST12LF02价格和库存,欢迎联系客服免费人工找货 |
SST12LF02规格书详情
描述 Description
The SST12LF02 is a 2.4 GHz Front-end Module (FEM)designed in compliance with IEEE 802.11b/g/n applications.It combines a high-performance Power Amplifier (PA)and a switch. There are three components to the FEM: theReceiver (RX) chain, the Transmitter (TX) chain, and theBluetooth® (BT) chain.The TX chain includes a high-efficiency PA based on theInGaP/GaAs HBT technology. This chain typically provides29 dB gain with 30% power-added efficiency (PAE) @POUT = 22 dBm for 802.11g and 29% PAE@POUT = 22dBm for 802.11bThe TX chain has excellent linearity, typically ~2.5% addedEVM at 18 dBm output power which is essential for 54Mbps 802.11g operation while meeting 802.11g spectrummask at 22 dBm.The SST12LF02 also features easy board-level usagealong with high-speed power-up/down controls. Ultra-lowreference current (total IREF ~2 mA) makes the SST12LF02controllable by an on/off switching signal directly from thebaseband chip. These features, coupled with low operatingcurrent, make the SST12LF02 ideal for the final stagepower amplification in battery-powered 802.11b/g/n WLANtransmitter applications.
特性 Features
Applications:-WLAN (IEEE 802.11b/g/n) Home RF; Cordless phones; -2.4 GHz ISM wireless equipment
• Features:High Gain:– Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C for Transmitter (TX) chain.
• High linear output power:– >24 dBm P1dB- Please refer to “Absolute Maximum StressRatings” on page 4– Meets 802.11g OFDM ACPR requirement up to22 dBm– ~2.5% added EVM up to 18 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 22 dBm
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Input/output ports matched to 50O internally and DC decoupled.
• Packages available– 16-contact XQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
简介
SST12LF02属于RF/IF射频/中频RFID的射频前端(LNA+PA)。由制造生产的SST12LF02射频前端(LNA + PA)本系列中的产品是各种集成电路,其中集成了射频 (RF) 信号链连接到系统天线的部分中常见的一种或多种功能,如低噪声放大器 (LNA) 和可编程放大器 (PA)。任何给定器件所含的实际功能各不相同,相比旨在提供更高应用灵活性的器件,针对相对较窄应用的器件通常集成更大一部分必要的信号链。
技术参数
更多- 产品编号:
SST12LF02-QXCE
- 制造商:
Microchip Technology
- 类别:
RF/IF,射频/中频和 RFID > 射频前端(LNA + PA)
- 包装:
剪切带(CT)Digi-Reel® 得捷定制卷带
- 射频类型:
802.11b/g/n
- 频率:
2.4GHz
- 封装/外壳:
16-VFQFN 裸露焊盘
- 供应商器件封装:
16-QFN(3x3)
- 描述:
IC AFE WLAN 11B/G/N 16XQFN
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MicrochipTechnology |
24+ |
原厂原装 |
6000 |
进口原装正品假一赔十,货期7-10天 |
询价 | ||
SST |
08+PBF |
QFN |
150 |
现货 |
询价 | ||
MICROCHIP |
23+ |
NA |
10021 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
询价 | ||
MICROCHIP/微芯 |
23+ |
UQFN6 |
4600 |
原装正品假一罚百!可开增票! |
询价 | ||
SST |
24+ |
QFN |
65200 |
一级代理/放心采购 |
询价 | ||
Microchip Technology |
24+ |
UQFN6 |
12800 |
强势渠道订货 7-10天 |
询价 | ||
MICROCHIP/微芯 |
23+ |
UQFN6 |
4600 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
Microchip |
25+ |
原厂原装 |
16000 |
原装优势绝对有货 |
询价 | ||
SST |
21+ |
UQFN |
2700 |
询价 | |||
Microchip |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |