TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V)

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Small Low ON resistance MOSFETs

Polarity：N-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 0.18 A \nPower Dissipation PD 0.1 W \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V ;

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High-Speed Switching Applications Analog Switch Applications

文件：205.13 Kbytes 页数：5 Pages

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MOSFETs Silicon N-Channel MOS

文件：227.15 Kbytes 页数：9 Pages

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MOSFETs Silicon N-Channel MOS

文件：228.55 Kbytes 页数：9 Pages

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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

文件：215.9 Kbytes 页数：5 Pages

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