Advanced Power MOSFET

FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 500V ♦Lower RDS(ON): 0.197Ω(Typ.)

文件：232.9 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

文件：282.45 Kbytes 页数：2 Pages

ISC

无锡固电

Fast Switching

文件：59.9 Kbytes 页数：2 Pages

ISC

无锡固电

500V,22A N-Channel MOSFET

General Description The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts canbe ad

文件：441.45 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

文件：325.99 Kbytes 页数：2 Pages

ISC

无锡固电