Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 μA(Max.) @ VDS = 600V ■ Low RDS(ON) : 0.646 Ω(Typ.)

文件：243.68 Kbytes 页数：7 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

文件：283.31 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

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600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：680.5 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：283.31 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：686.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体