Output to 75A, 510 Vac with Diagnostics

文件：859.85 Kbytes 页数：5 Pages

TELEDYNE

华特力科

Aluminum Electrolytic Capacitors

文件：285.62 Kbytes 页数：2 Pages

MERITEK

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 μA(Max.) @ VDS = 600V ■ Low RDS(ON) : 0.646 Ω(Typ.)

文件：243.68 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：680.5 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 500V ♦Lower RDS(ON): 0.197Ω(Typ.)

文件：232.9 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 500V ♦Lower RDS(ON): 0.197Ω(Typ.)

文件：232.9 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：681.71 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10㎂ (Max.) @ VDS = 200V Low RDS(ON) : 0.054Ω(Typ.)

文件：258.85 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：681.71 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.018 Ω (Typ.)

文件：262.38 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司