High dv/dt and avalanche capabilities

文件：386.53 Kbytes 页数：8 Pages

SILIKRON

新硅能微电子

MOSFET

Silikron

新硅能微电子

20Amps, 650Volts N-Channel Super Juction MOS-FET

文件：889.84 Kbytes 页数：7 Pages

FS

20Amps, 650Volts N-Channel Super Juction MOS-FET

文件：889.84 Kbytes 页数：7 Pages

FS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：323.63 Kbytes 页数：2 Pages

ISC

无锡固电