High Power and current handing capability

DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON)

文件：324.44 Kbytes 页数：7 Pages

SILIKRON

新硅能微电子

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：471.51 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET

Silikron

新硅能微电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：192.74 Kbytes 页数：5 Pages

SSC

Silicon Standard Corp.

P-Channel 20-V (D-S) MOSFET

文件：1.038619 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：198.92 Kbytes 页数：4 Pages

SSC

Silicon Standard Corp.