Battery protection

DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON)

文件：309.18 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：493.97 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

30V N-Channel MOSFET

DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON)

文件：332.23 Kbytes 页数：4 Pages

Good-Ark

固锝电子

MOSFET

Silikron

新硅能微电子

Battery protection

DESCRIPTION The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 29V,ID = 5A RDS(ON)

文件：309.9 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

30V N-Channel MOSFET

文件：332.23 Kbytes 页数：4 Pages

Good-Ark

固锝电子

Battery protection

Silikron

新硅能微电子