high pressure internal fitting

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CYNERGY3

High Power and current handing capability

DESCRIPTION The SSF2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：331.97 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

20V Dual N-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

文件：576.67 Kbytes 页数：6 Pages

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固锝电子

20V Dual N-Channel MOSFET

DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：483.6 Kbytes 页数：4 Pages

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High Power and current handling capability

DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：304.48 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

20V Dual N-Channel MOSFET

DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON)

文件：463.77 Kbytes 页数：4 Pages

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Advanced MOSFET process technology

文件：534.54 Kbytes 页数：7 Pages

SILIKRON

新硅能微电子

High Power and current handing capability

文件：292.72 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

20V Dual N-Channel MOSFET

文件：471.08 Kbytes 页数：4 Pages

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固锝电子

20V Dual N-Channel MOSFET

文件：471.08 Kbytes 页数：4 Pages

Good-Ark

固锝电子