30V Dual P-Channel MOSFET

DESCRIPTION The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). GENERAL FEATURES ● VDS = -30V,ID = -5A RDS(ON)

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Battery protection

DESCRIPTION The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). GENERAL FEATURES ● VDS = -30V,ID = -5A RDS(ON)

文件：509.58 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

MOSFET

Silikron

新硅能微电子

30V Dual P-Channel MOSFET

文件：423.92 Kbytes 页数：4 Pages

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固锝电子

30V P-Channel MOSFET

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High Power and current handing capability

文件：317.58 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

30V P-Channel MOSFET

文件：409.97 Kbytes 页数：4 Pages

Good-Ark

固锝电子

MOSFET

Silikron

新硅能微电子