30V Dual N-Channel MOSFET

DESCRIPTION The SSF3624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON)

文件：456.32 Kbytes 页数：4 Pages

Good-Ark

固锝电子

PWM applications

DESCRIPTION The SSF3624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON)

文件：515.14 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

MOSFET

Silikron

新硅能微电子

12 Watt Desktop C8 SMPSU Range

Universal AC Input 90—264Vac High Quality and High Reliability No minimum load requirement Low ripple & noise 100% burn-in test Energy Saving: Efficiency Level V ErP/EuP Safety: UL, cUL, GS, CE, FCC 1 year warranty

文件：958.36 Kbytes 页数：2 Pages

Stontronics

LMG3624 650-V 170-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650-V 170-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.33941 Mbytes 页数：30 Pages

TI

德州仪器