20V P-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

文件：1.04192 Mbytes 页数：7 Pages

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固锝电子

PWM applications

DESCRIPTION The SSF2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON)

文件：288.7 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：471.07 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Advanced MOSFET process technology

Semikron-DANFOSS

赛米控丹佛斯

MOSFET

Silikron

新硅能微电子

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：471.46 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

PWM applications

DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -4A RDS(ON)

文件：282.12 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

20V P-Channel MOSFET

DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -4A RDS(ON)

文件：333.64 Kbytes 页数：4 Pages

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固锝电子

20V P-Channel MOSFET

DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -2.8A RDS(ON)

文件：327.76 Kbytes 页数：4 Pages

Good-Ark

固锝电子

PWM applications

DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -2.8A RDS(ON)

文件：289.3 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子