20V N-Channel MOSFET

文件：696.63 Kbytes 页数：6 Pages

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The SSF2300 uses advanced trench technology

文件：348.83 Kbytes 页数：7 Pages

SILIKRON

新硅能微电子

MOSFET

Silikron

新硅能微电子

Battery protection

DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：407.61 Kbytes 页数：7 Pages

SILIKRON

新硅能微电子

20V N-Channel MOSFET

DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：730.28 Kbytes 页数：6 Pages

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固锝电子

20V N-Channel MOSFET

DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：409.41 Kbytes 页数：4 Pages

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固锝电子

Battery protection

DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 4.5A RDS(ON)

文件：369.97 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

Advanced MOSFET process technology

Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description It utilizes the latest

文件：1.17039 Mbytes 页数：6 Pages

SILIKRON

新硅能微电子

Advanced MOSFET process technology

Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description It utilizes the latest

文件：1.16821 Mbytes 页数：6 Pages

SILIKRON

新硅能微电子

20V N-Channel MOSFET

文件：691.08 Kbytes 页数：6 Pages

GOOD-ARK

固锝电子