丝印：SPP；Package：SOT-23；TVS Diode Array

文件：1.74737 Mbytes 页数：7 Pages

LEIDITECH

雷卯电子

丝印：04N80C3；Package：PG-TO220-3；CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances

文件：448.56 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：07N65C3；Package：PG-TO220；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance ● PG-TO-220-3: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS compliant • Quali

文件：396.38 Kbytes 页数：15 Pages

Infineon

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：282.69 Kbytes 页数：12 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.47 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：306.41 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance an

文件：337.66 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.09085 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Industrial with high DC bulk voltage ·Switching

文件：296.37 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：261.72 Kbytes 页数：12 Pages

Infineon

英飞凌