NPN EPITAXIAL SILICON TRANSISTOR

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE ● Complemen to 2SA1037 ● Collector-current:Ic=100mA ● Collector-Emiller Voltage:VCE=45V ● High Totalpower Dissipation Pc=225mW ● High life And Good Linearity

文件：99.97 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

SOT-23 TRANSISTOR

GENERAL PURPOSE TRANSISTOR • Complementary Pair with MMBT3906LT1. • Collector Dissipation:Pc=225mW • Collector-Emitter Voltage: VCEO=40V • NPN Epitaxial Silicon Transistor

文件：154.69 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

SOT-23 Plastic-Encapsulate DIODE

Features Power dissipation PD : 150 mW (Tamb=25°C) Forward Current IF : 100 mA Reverse Voltage VR : 80V Operating and storage junction temperature range Tj, Tsta : -55°C to +150°C

文件：147.16 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

SOT-23 TRANSISTOR

Description • Medium Power Amplifier. • NPN Silicon Transistor. Features • Large collector current:ICmax=600mA • Low collector saturation voltage enabling low voltage operation • Complementary pair with .

文件：158.76 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

Planar Die Construction.

FEATURES ● Planar Die Construction. ● 350mw Power Dissipation. ● Zener Voltages From 2.4V -51V ● Ideally Suited For Automated Assembly Prcesses. APPLICATIONS • 350Mw Surface mount zener diode

文件：435.23 Kbytes 页数：5 Pages

WINNERJOIN

永而佳

SOT-23 Plastic-Encapsulate DIODE

SWITCHING DIODE FEATURES ● Fast Switching Speed ● For General Purpose Switching Applications ● High Conductance

文件：179.41 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

SOT-23 Plastic-Encapsulate DIODE

SOT-23 Plastic-Encapsulate DIODE Features Power dissipation PD : 150 mW (Tamb=25°C) Forward Current IF : 100 mA Reverse Voltage VR : 80V Operating and storage junction temperature range Tj, Tstg : -55°C to +150°C

文件：70.22 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER • Complemen to 2SC2712 • Collector-current:Ic=-100mA Collector-Emiller Voltage:VCE=-45V

文件：98.23 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

SOT-23 Plastic- Encapsulate DIODE

SWITCHING DIODE FEATURES * Power dissipation PD: 150 mW(Tamb=25°C) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55°Cto+150°C

文件：70.06 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

NPN EPITAXIAL SILICON TRANSISTOR

2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION • Complement to MMPT8550LT1 • Collector Current:Ic=500mA • Collector Dissipation:Pc=225mW (Tc=25 °C)

文件：164.17 Kbytes 页数：2 Pages

WINNERJOIN

永而佳