Switching Diodes

Features ◇ Low forward voltage : VF(3)=0.92V(typ.) ◇ Fast reverse recovery time : trr=1.6ns(typ.)

文件：246.85 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Schottky Barrier Diodes

Features ◇ Small surface mounting type. ◇ Low reverse current and low forward voltage. ◇ High reliability. Applications ◇ Schottky barrier diode.

文件：302.41 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Switching Diodes

Features ◇ Low forward voltage : VF (3) = 0.9V (typ.) ◇ Fast reverse recovery time : trr = 1.6ns (typ.) ◇ Small total capacitance : CT = 0.9pF (typ.)

文件：250.5 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

TRANSISTOR (NPN)

Features • Power dissipation PCM : 0.225 W (Tamb=25°C) • Pluse Drain ICM : 0.6 mA • Reverse Voltage V(BR)CBO : 60V • Operating and storage junction temperature range Tj , Tstg : -55 C to +150 C

文件：153.69 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

Low current(100mA)

FEATURES * Low current(100mA) * Low voltage(32V) * General purpose swithching and amplification

文件：77.49 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

MONOL LTHIC DUAL SWITCHING DIODE

MONOL LTHIC DUAL SWITCHING DIODE

文件：154.48 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQRENCY,LOW NOISE AMPLIFIER ● Complemen to MMPT9014LT1 ● Collector-current:Ic=-100mA Collector-Emiller Voltage:VCE=-45V

文件：149.4 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

TRANSISTOR (PNP)

FEATURES • Epitaxial planar die construction • Complementary NPN Type available(MMBT2222A)

文件：280.93 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTORS

文件：69.45 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

SOT-23 Plastic-Encapsulate DIODE

SWITCHING DIODE FEATURES • Power dissipation PD : 150 mW(Tamb=25℃) • Forward Current IF : 100 m A • Reverse Voltage VR: 80 V • Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

文件：88.27 Kbytes 页数：2 Pages

WINNERJOIN

永而佳