Low-leakage Double Diode

Features ◇ Plastic SMD package ◇ Low leakage current: typ. 3pA ◇ Switching time: typ. 0.8 ms ◇ Continuous reverse voltage: max. 75V ◇ Repetitive peak reverse voltage: max. 85V ◇ Repetitive peak forward current: max. 500mA. Applications ◇ Low-leakage current applications in surface mounted

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Dual Surface Mount Fast Switching Diode

Features ◇ High speed. ◇ High reliability. ◇ Suitable for hig packing density layout. Applications ◇ Ultra high speed switching ◇ Silicon epitaxial planar

文件：224.16 Kbytes 页数：2 Pages

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Surface Mount Switching Diode

Features ◇ Small surface mounting type.(UMD3,SMD3) ◇ Two diode elements are connected in series. Applications ◇ High speed switching application.

文件：219.84 Kbytes 页数：2 Pages

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Dual Surface Mount Fast Switching Diode

Features ◇ High speed. ◇ High reliability. ◇ Suitable for hig packing density layout. Applications ◇ Ultra high speed switching ◇ Silicon epitaxial planar

文件：229.2 Kbytes 页数：2 Pages

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Surface Mount Schottky Barrier Diode

Features ◇ Low turn-on voltage ◇ Fast switching ◇ PN junction guard Ring for transient

文件：143.19 Kbytes 页数：2 Pages

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200mW Surface Mount Schottky Barrier Diode

Features • Low turn-on voltage • Fast switching • PN junction guard Ring for transient

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Switching Diode

Features ◇ Fast Switching Speed ◇ Surface Mount Package Ideally Suited for Automatic Insertion ◇ For General Purpose Switching Applications ◇ High Conductance

文件：221.06 Kbytes 页数：2 Pages

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Surface Mount Switching Diode

Features ◇ Fast switching speed. ◇ High conductance. ◇ For general purpose switching applications. ◇ Surface mount package ideally suited for automatic insertion. Applications ◇ Small signal switching

文件：231.2 Kbytes 页数：2 Pages

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Schottky Barrier Diode

Features ◇ Extremely Fast switching speed. ◇ Low forward voltage. ◇ Power dissipation Pd=350mW ◇ Pb/RoHS Free Applications ◇ Fast switching application.

文件：224.87 Kbytes 页数：2 Pages

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Schottky Barrier Diode

Features ◇ Low noise figure -6.0dB @1.0GHz ◇ Surface mount package ideally suited for automatic insertion. ◇ Very low capacitance –less than 1.0pF @zero volts. ◇ High forward conductance -0.5volts (typ.) @IF=10mA. Applications ◇ High speed switching.

文件：241.09 Kbytes 页数：2 Pages

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