SOT-23 Plastic-Encapsulate DIODE

SOT-23 Plastic-Encapsulate DIODE Features ● Power dissipation PD : 150 mW (Tamb=25°C) ● Forward Current IF : 100 mA ● Reverse Voltage VR : 80V ● Operating and storage junction temperature range Tj , Tstg : -55°C to +150°C

文件：88.61 Kbytes 页数：2 Pages

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NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR * Feature: (1) Low Cob. Cob=2.0pF (2) Complements the 2SA1037AK/2SA1576/2SA1774/2SA1774H/2SA2029/2SA933AS.

文件：121.41 Kbytes 页数：2 Pages

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NPN EPITAXIAL SILICON TRANSISTOR

AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER • High Current Gain Bandwidth Product fT=1100MHz

文件：142.82 Kbytes 页数：2 Pages

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PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS

文件：64.29 Kbytes 页数：1 Pages

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SOT-23 Plastic-Encapsulate Diodes

SWITCHING DIODE FEATURES Power dissipation PD: 225 mW(Tamb=25℃) Forward Current IF: 200 mA Reverse Voltage VR: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +15℃

文件：223.7 Kbytes 页数：2 Pages

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PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION • Complement to MMPT8050LT1 • Collector-current:Ic=-500mA • High Total Power Dissipation:Pc=225mW

文件：144.91 Kbytes 页数：2 Pages

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SOT-23 Plastic-Encapsulate Transistors

文件：154.92 Kbytes 页数：2 Pages

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NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR * Complement to 2SA1015 * Collector Current :Ic=150mA

文件：67.95 Kbytes 页数：1 Pages

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SOT-23 TRANSISTOR

GENERAL PURPOSE TRANSISTOR • Collector Dissipation:Pc=225mW • Complementary Pair with MMBT3904LT1. • Collector-Emitter Voltage: VCEO=-40V • PNP Epitaxial Silicon Transistor

文件：155.6 Kbytes 页数：2 Pages

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SWITCHING DIODE

Features Power dissipation PD : 225 mW (Tamb=25°C) Pluse Drain IF : 200 mA Reverse Voltage VR : 250V Operating and storage junction temperature range Tj , Tstg : -55 °C to +150 °C

文件：86.42 Kbytes 页数：2 Pages

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