MONOLITHIC DUAL SWITCHING DIODE

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NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW(Ta=25

文件：71.17 Kbytes 页数：1 Pages

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SOT-23 TRANSISTOR

GENERAL PURPOSE TRANSISTOR Collector Dissipation:Pc=225mW Collector-Emitter Voltage VCEO: =40V NPN Epitaxial Silicon Transistor

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NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity

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SOT-23 Plastic-Encapsulate DIODE

SOT-23 Plastic-Encapsulate DIODE Features ● Power dissipation PD : 150 mW (Tamb=25°C) ● Forward Current IF : 100 mA ● Reverse Voltage VR : 80V ● Operating and storage junction temperature range Tj, Tstg : -55°C to +150°C

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MOSFET (N-Channel)

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

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MONOL LTHIC DUAL SWITCHING DIODE

MONOLTHIC DUAL SWITCHING DIODE

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NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity

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NPN EPITAXIAL SILICON TRANSISTOR

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE • Complemen to MMPT9015LT1 • Collector-current:Ic=100mA • Collector-Emiller Voltage:VCE=45V • High Totalpower Dissipation Pc=225mW • High life And Good Linearity

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NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR ● Collector Dissipation:Pc-225mW(Ta=25°) ● Collector-Emiller Voltage: VCEO=160V

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