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AOB42S60

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=37A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=109mΩ(Max) •100avalanchetested •Minimum

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOB42S60

600V37AaMOSPowerTransistor

GeneralDescription TheAOT42S60&AOB42S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth

AOSMDAlpha & Omega Semiconductors

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AOB42S60L

600V37AaMOS

GeneralDescription TheAOT42S60&AOB42S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOB42S60L

600V37AaMOSTMPowerTransistor

GeneralDescription TheAOT42S60L&AOB42S60Lhavebeenfabricated usingtheadvancedaMOSTMhighvoltageprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinswitchingapplications. ByprovidinglowRDS(on),Qg andEOSSalongwith guaranteedavalanchecapabilit

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK42S60

600V39AaMOSPowerTransistor

GeneralDescription TheAOK42S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythisdevicecanbe

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK42S60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=39A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK42S60L

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=47A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.099Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK42S60L

600V39AaMOS

GeneralDescription TheAOK42S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythisdevicecanbe

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK42S60L

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=39A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max) •100avalanchetested •Minimum

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT42S60

600V37AaMOSPowerTransistor

GeneralDescription TheAOT42S60&AOB42S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT42S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT42S60L

600V37AaMOSTMPowerTransistor

GeneralDescription TheAOT42S60L&AOB42S60Lhavebeenfabricated usingtheadvancedaMOSTMhighvoltageprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinswitchingapplications. ByprovidinglowRDS(on),Qg andEOSSalongwith guaranteedavalanchecapabilit

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT42S60L

600V37AaMOS

GeneralDescription TheAOT42S60&AOB42S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF42S60

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=39A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max) •100avalanchetested •Minimum

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOTF42S60

PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF42S60

600V42AaMOSTMPowerTransistor

Thisreportappliesfor600V42AαMOSTMPowerTransistorAOTF42S60. AOTF42S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguara

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF42S60L

PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF42S60L

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=39A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=99mΩ(Max) •100avalanchetested •Minimum

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
昂斯美
23+
TO-TO-220F
33500
全新原装真实库存含13点增值税票!
询价
昂斯美
23+
TO-220F
10000
公司只做原装正品
询价
昂斯美
22+
TO-220F
6000
十年配单,只做原装
询价
昂斯美
23+
TO-220F
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
昂斯美
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
更多SMTF42S60L供应商 更新时间2024-9-26 14:26:00