MJE3439

NPNSiliconHigh-VoltagePowerTransistors

MJE3439

0.3AMPEREPOWERTRANSISTORNPNSILICON350VOLTS15WATTS

NPNSiliconHigh-VoltagePowerTransistors ...designedforuseinline–operatedequipmentrequiringhighfT. •HighDCCurrentGain hFE=40–160@IC=20mAdc •CurrentGainBandwidthProduct— fT=15MHz(Min)@IC=10mAdc •LowOutputCapacitance Cob=10pF(

MJE3439

NPNSiliconHigh?뭋oltagePowerTransistor

NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC

MJE3439G

NPNSiliconHigh-VoltagePowerTransistor

NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC

MJE3439G

NPNSiliconHigh?뭋oltagePowerTransistor

NPNSiliconHigh−VoltagePowerTransistor Thisdeviceisdesignedforuseinline−operatedequipmentrequiringhighfT. Features •HighDCCurrentGain−hFE=40−160@IC =20mAdc •CurrentGainBandwidthProduct−fT=15MHz(Min)@IC

MM3439

Lithium-IonBatteryChargeControlIC

NJ3439KDW

SOT-363Plastic-EncapsulateMOSFETs

FEATURE SurfaceMountPackage LowRDS(on) OperatedatLowLogicLevelGateDrive ESDProtectedGate IncludingaN-chCJ3134KandaP-chCJ3139K independently)InaPackage

PJA3439

60VP-ChannelEnhancementModeMOSFET

PJA3439-AU

60VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-500mA

PN3439

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage. FEATURES •Lowcurrent(max.100mA) •Highvoltage(max.350V). APPLICATIONS •Telephonyandprofessionalcommunicationequipment.