丝印：s1A；Package：SOT-23；NPN Silicon Switching Transistor

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

文件：207.83 Kbytes 页数：7 Pages

Infineon

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丝印：s1A；Package：SOT-23；NPN Silicon Switching Transistors

文件：146.92 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：s1A；Package：SOT23；NPN Silicon Switching Transistors

文件：867.93 Kbytes 页数：11 Pages

Infineon

英飞凌

NPN Silicon Switching Transistor

文件：212.71 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon Switching Transistor

Infineon

英飞凌

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：102.68 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：138.28 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件：102.68 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NPN/PNP Silicon Switching Transistor Array

NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：217.19 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：s1A；Package：SOT-363；NPN Silicon Switching Transistor Array

NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientat

文件：76 Kbytes 页数：8 Pages

Infineon

英飞凌