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SMBT3904DW1T1G

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件:138.28 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

SMBT3904DW1T1G

Dual General Purpose Transistors

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for

文件:102.68 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

LMBT3904DW1T1

Dual General Purpose Transistor

Dual General Purpose Transistor The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this d

文件:201.12 Kbytes 页数:7 Pages

LRC

乐山无线电

LMBT3904DW1T1G

Dual General Purpose Transistor

Dual General Purpose Transistor The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, this d

文件:188.41 Kbytes 页数:7 Pages

LRC

乐山无线电

MBT3904DW1T1

Dual General Purpose Transistors

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin-of f of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal

文件:105.7 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

详细参数

  • 型号:

    SMBT3904DW1T1G

  • 功能描述:

    两极晶体管 - BJT SS GP XSTR NPN 40V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON/安森美
22+
SOT-363
45000
原装正品
询价
ON
24+
SOT363
9000
只做原装 假一赔十
询价
ON/安森美
20+
SOT-363
120000
原装正品 可含税交易
询价
ON
22+
SOT-363
10000
全新、原装
询价
ON/安森美
24+
SOT-363
52048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
ON(安森美)
23+
11537
公司只做原装正品,假一赔十
询价
三年内
1983
只做原装正品
询价
ON Semiconductor
2010+
N/A
2629
加我qq或微信,了解更多详细信息,体验一站式购物
询价
ON(安森美)
2447
SOT-363-6
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
ON
25+
SOT-363
6675
就找我吧!--邀您体验愉快问购元件!
询价
更多SMBT3904DW1T1G供应商 更新时间2025-12-8 15:38:00