IRFU9014

HEXFETPowerMOSFET

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL

SS9014

Pre-Amplifier,LowLevel&LowNoise

Pre-Amplifier,LowLevel&LowNoise •Hightotalpowerdissipation.(PT=450mW) •HighhFEandgoodlinearity •ComplementarytoSS9015

SS9014A

Pre-Amplifier,LowLevel&LowNoise

Pre-Amplifier,LowLevel&LowNoise •Hightotalpowerdissipation.(PT=450mW) •HighhFEandgoodlinearity •ComplementarytoSS9015

SS9014B

Pre-Amplifier,LowLevel&LowNoise

Pre-Amplifier,LowLevel&LowNoise •Hightotalpowerdissipation.(PT=450mW) •HighhFEandgoodlinearity •ComplementarytoSS9015

SS9014C

Pre-Amplifier,LowLevel&LowNoise

Pre-Amplifier,LowLevel&LowNoise •Hightotalpowerdissipation.(PT=450mW) •HighhFEandgoodlinearity •ComplementarytoSS9015

SS9014D

Pre-Amplifier,LowLevel&LowNoise

Pre-Amplifier,LowLevel&LowNoise •Hightotalpowerdissipation.(PT=450mW) •HighhFEandgoodlinearity •ComplementarytoSS9015

ST9014

NPNSiliconEpitaxialPlanarTransistor

forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,CandD,accordingtoitsDCcurrentgain.AscomplementarytypethePNPtransistorST9015isrecommended. Onspecialrequest,thesetransistorscanbemanufacturedindifferentpinconfigura

ST9014

TRANSISTOR(NPN)

STC9014

NPNSiliconTransistor

NPNEpitaxialSiliconTransistor AudioFrequencyAmplifier&HighFrequencyOSC. •ComplementtoSTC9015 •Collector-BaseVoltage:VCBO=60V •HighCurrentGainBandwidthProduct:fT=300MHz(TYP) •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)

STC9014N

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •ComplementarypairwithSTA9015N

STC9014SF

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •ComplementarypairwithSTA9015SF

STS9014

NPNSiliconTransistor

STS9014

NPNSiliconTransistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •Lownoise:NF=10dB(Max.)atf=1KHz •ComplementarypairwithSTS9015

STS9014

NPNSiliconTransistor

U9014

AdvancedPowerMOSFET

FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •LowerLeakageCurrent:10µA(Max.)@VDS=-60V •LowerRDS(ON):0.362Ω(Typ.)