STC9014SF

NPN Silicon Transistor

Description •Generalpurposeapplication •Switchingapplication Features •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) •ComplementarypairwithSTA9015SF

9014

NPNSILICONTRANSISTOR

FEATURES Powerdissipation PCM:0.4W(Tamb=25°C) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:50V

9014

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors NPNsilicon

9014

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,C andD,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistorST9015is recommended. Onspecialrequest,thesetransistorscanbe

9014

FairchildQFETforSynchronousRectification

Introduction FairchildiscurrentlydevelopingandmarketinganewQFETseriesthathasimprovedRDS(on),gatecharge,andswitchingspeedcharacteristics.ThesuperiorfeaturesoftheseQFETsareveryusefulforincreasingtheefficiencyoflowoutputvoltagepowersupplies,makingitspecially

9014

NPNEPITAXIALSILICONTRANSISTOR

PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015

9014

SiliconNPNtransistor

9014B

SiliconNPNEpitaxialTransistor

9014C

NPNEPITAXIALSILICONTRANSISTOR

PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015

9014M

SiliconNPNtransistorinaSOT-23PlasticPackage