Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

文件：38.64 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Package：TO-226-3，TO-92-3 标准主体（!--TO-226AA）；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.1A TO92-3

ONSEMI

安森美半导体

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.1A TO92-3

ONSEMI

安森美半导体

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

文件：38.64 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Pre-Amplifier, Low Level & Low Noise

Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT = 450mW) • High hFE and good linearity • Complementary to SS9015

文件：38.64 Kbytes 页数：4 Pages

Fairchild

仙童半导体

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be manufactured in different pin configura

文件：298.7 Kbytes 页数：5 Pages

SEMTECH_ELEC

先之科半导体