E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

文件：215.45 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

文件：417.31 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: fo

文件：208.87 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: fo

文件：208.87 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：445.12 Kbytes 页数：2 Pages

ISC

无锡固电

EF Series Power MOSFET with Fast Body Diode

文件：145.31 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

·Low figure-of-merit (FOM) Ron x Qg\n·Low input capacitance (Ciss)\n·Reduced switching and conduction losses;

Vishay

威世

EF Series Power MOSFET with Fast Body Diode

·Fast body diode MOSFET using E series technology\n·Reduced trr, Qrr, and IRRM\n·Low figure-of-merit (FOM): Ron x Qg;

Vishay

威世