IRFPS35N50L

FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-f

文件：152.06 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFPS35N50L

FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-f

文件：152.06 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFPS35N50L

Vishay

威世

HEXFET Power MOSFET

Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Low Trr and Soft Diode Recovery High Performance Optimised Anti-parallel Diode Application

文件：154.09 Kbytes 页数：8 Pages

IRF

IRFPS35N50L

FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-f

文件：152.06 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

SMPS MOSFET

文件：152.7 Kbytes 页数：8 Pages

IRF