Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.41713 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR310, SiHFR310) • Straight lead (IRFU310, SiHFU310) • Available in tape and reel • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc

文件：835 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：3.93309 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：3.93235 Mbytes 页数：7 Pages

KERSEMI

丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

文件：332.27 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.07622 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR310, SiHFR310);

Vishay

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：3.93309 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.41713 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.41713 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司