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SIHFR210

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:2.39965 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFR210

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR210, SiHFR210) • Straight lead (IRFU210, SiHFU210) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?9

文件:834.32 Kbytes 页数:11 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFR210

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:4.91599 Mbytes 页数:7 Pages

KERSEMI

SiHFR210

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR210, SiHFR210);

Vishay

威世

SIHFR210-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:4.91599 Mbytes 页数:7 Pages

KERSEMI

SIHFR210-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:2.39965 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFR210T

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:2.39965 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFR210TA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:4.91599 Mbytes 页数:7 Pages

KERSEMI

SIHFR210T-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:2.39965 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

SIHFR210T-E3A

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:4.91599 Mbytes 页数:7 Pages

KERSEMI

详细参数

  • 型号:

    SIHFR210

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
VISHAY
SOT-252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
Vishay
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
询价
VISHAY/威世
23+
TO-252
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
23+
TO-252
50000
全新原装正品现货,支持订货
询价
VB
21+
TO-252
10000
原装现货假一罚十
询价
VISHAY/威世
2022+
TO-252
50000
原厂代理 终端免费提供样品
询价
VISHAY/威世
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
Vishay
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY/威世
24+
TO-252
60000
询价
VISHAY/威世
23+
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
更多SIHFR210供应商 更新时间2025-12-24 9:11:00