SIHFR9110T规格书应用电路批发供应威世科技-114ic电子网

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SIHFR9110T	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
SIHFR9110T	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110T	文件：1.04729 Mbytes Page：9 Pages	P-Channel 100 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SIHFR9110TA	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110TA	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110T-E3	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
SIHFR9110T-E3A	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110T-E3A	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110TL	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
SIHFR9110TLA	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110TLA	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110TL-E3	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
SIHFR9110TL-E3A	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110TL-E3A	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110T-E3	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110TL	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110TL-E3	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9110TL-E3	文件：1.04729 Mbytes Page：9 Pages	P-Channel 100 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SIHFR9110TR-GE3	文件：845.12 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay
SIHFR9110TRL-GE3	文件：845.12 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay

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详细参数

型号：
SIHFR9110T
制造商：
VISHAY
制造商全称：
Vishay Siliconix
功能描述：
Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	SIHFR9110T		23+	N/A	89950	正品授权货源可靠	询价
深圳市鼎欣微电子有限公司	SIHFR9110T	VISHAY/威世	21+	TO-252	30000	只做正品原装现货	询价
深圳市保之丰科技有限公司	SIHFR9110T	V	21+	TO-252	10001		询价
深圳市惊羽科技有限公司	SIHFR9110T	VISHAY-威世	24+25+/26+27+	TO-252-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市科恒伟业电子有限公司	SIHFR9110TR-GE3	VISHAY/威世	22+	TO-252	5623	只做原装正品现货!或订货假一赔十!	询价
深圳市振芯物联科技有限公司	SIHFR9110TR-GE3	VISHAY	22+	TO-252	28600	只做原装正品现货假一赔十一级代理	询价
深圳市英瑞芯科技有限公司	SIHFR9110TR-GE3	VISHAY	22+	TO-252	8900	英瑞芯只做原装正品!!!	询价
贸泽芯城（深圳）电子科技有限公司	SiHFR9110TR-GE3	VISHAY/威世		TO-252	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市威雅利发展有限公司	SIHFR9110TR-GE3	VISHAY	12+	TO-252	2000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
中科航电（深圳）电子集团有限公司	SIHFR9110TR-GE3	VISHAY		TO-252	893993	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价

更多SIHFR9110T供应商更新时间2024-5-24 11:36:00

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