SIHFR9110T-E3A技术资料参数原装现货威世-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SIHFR9110T-E3A	文件：3.89222 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：3.89222 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
SIHFR9110T-E3A	文件：3.89837 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：3.89837 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
SIHFR9110T-E3	文件：3.76945 Mbytes Page：7 Pages	Dynamic dV/dt Rating 文件：3.76945 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
SIHFR9110T-E3	文件：1.37621 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：1.37621 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世	Vishay

更多SIHFR9110T-E3A供应商更新时间2025-10-12 12:00:00