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SIHFR9210	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技	Vishay
SIHFR9210	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技	Vishay
SIHFR9210-E3	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技	Vishay
SIHFR9210-E3	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210-E3	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210-E3	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210-E3	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210-GE3	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技	Vishay
SIHFR9210T	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技	Vishay
SIHFR9210TA	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TA	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TA	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TA	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210T-E3	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技	Vishay
SIHFR9210T-E3A	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210T-E3A	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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详细参数

型号：
SIHFR9210
制造商：
VISHAY
制造商全称：
Vishay Siliconix
功能描述：
Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	SiHFR9210		23+	N/A	12550	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	SiHFR9210	Vishay	23+	TO-252	33500	全新原装真实库存含13点增值税票!	询价
深圳市纳艾斯科技有限公司	SiHFR9210	VISHAY	2020+	TO-252	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市拓亿芯电子有限公司	SiHFR9210	VISHAY	23+	TO-252	30000	代理全新原装现货,价格优势	询价
深圳市安富世纪电子有限公司	SiHFR9210	VISHAY/威世	21+	TO-252	50000	终端可免费提供样品,欢迎咨询	询价
深圳市振芯物联科技有限公司	SiHFR9210	VISHAY	22+	TO-252	28600	只做原装正品现货假一赔十一级代理	询价
深圳市国宇半导体科技有限公司	SiHFR9210	VISHAY/威世	23+	TO-252	10000	公司只做原装正品	询价
深圳市威尔健半导体有限公司	SiHFR9210	VISHAY/威世	23+	TO-252	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	SiHFR9210	VISHAY/威世	21+	TO-252	10000	原装现货假一罚十	询价
深圳廊盛科技有限公司	SiHFR9210	VISHAY/威世	2022	TO-252	80000	原装现货,OEM渠道,欢迎咨询	询价

更多SIHFR9210供应商更新时间2024-5-16 11:36:00

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