Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件：832.21 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9310, SiHFR9310) • Straight lead (IRFU9310, SiHFU9310) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat

文件：267.35 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

文件：3.34658 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

文件：3.34605 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：3.34757 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：247.16 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Advanced process technology\nFully avalanche rated\nSurface-mount (IRFR9310, SiHFR9310);

Vishay

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

文件：3.34605 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件：832.21 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件：832.21 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司