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SIHFR9310T

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件:832.21 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

SIHFR9310T

Power MOSFET

文件:3.34757 Mbytes 页数:7 Pages

KERSEMI

SIHFR9310TA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

文件:3.34605 Mbytes 页数:7 Pages

KERSEMI

SIHFR9310T-E3

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件:832.21 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

SIHFR9310T-E3A

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

文件:3.34605 Mbytes 页数:7 Pages

KERSEMI

SIHFR9310TL

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件:832.21 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

SIHFR9310TLA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

文件:3.34605 Mbytes 页数:7 Pages

KERSEMI

SIHFR9310TL-E3

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件:832.21 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

SIHFR9310TL-E3A

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre

文件:3.34605 Mbytes 页数:7 Pages

KERSEMI

SIHFR9310TR-E3

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre

文件:832.21 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    SIHFR9310T

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
VISHAY/威世
23+
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Vishay / Siliconix
2025+
TO-252-3
56303
询价
VISHAY/威世
24+
TO-252
30000
只做正品原装现货
询价
NK/南科功率
2025+
TO-252
986966
国产
询价
Vishay
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY/威世
TO-252
22+
6000
十年配单,只做原装
询价
VISHAY/威世
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
VISHAY
23+
SOT252
8560
受权代理!全新原装现货特价热卖!
询价
VISHAY/威世
23+
SOT252
8000
只做原装现货
询价
VISHAY/威世
23+
SOT252
7000
询价
更多SIHFR9310T供应商 更新时间2025-10-5 11:10:00