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SIHFR1N60A

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

SiHFR1N60A

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup

文件:2.6729 Mbytes 页数:7 Pages

LUCKY-LIGHT

SIHFR1N60A

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPL

文件:270.24 Kbytes 页数:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

SIHFR1N60A

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Sup

文件:2.6729 Mbytes 页数:7 Pages

KERSEMI

SIHFR1N60A

丝印:DPAK;Package:TO-252;iscN-Channel MOSFET Transistor

文件:333.46 Kbytes 页数:2 Pages

ISC

无锡固电

SIHFR1N60A

N-Channel 650 V (D-S) MOSFET

文件:1.08652 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

SIHFR1N60A-E3

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

SIHFR1N60AT

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

SIHFR1N60AT-E3

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

SIHFR1N60ATL-E3

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIO

文件:156.53 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    SIHFR1N60A

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
VIS
23+
DPAK
10000
原装正品,假一罚十
询价
VB
25+
DPAK
10000
原装现货假一罚十
询价
VISHAY/威世
2022+
TO-252
32500
原厂代理 终端免费提供样品
询价
VISHAY/威世
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
VISHAY/威世
20+
TO-252
7500
现货很近!原厂很远!只做原装
询价
VISHAY(威世)
2447
TO-252-3
115000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
VISHAY
25+
TO-252
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY/威世
23+
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Vishay Siliconix
2022+
TO-252-3,DPak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
NK/南科功率
2025+
TO-252
986966
国产
询价
更多SIHFR1N60A供应商 更新时间2026-2-8 15:35:00