Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for    External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Avai

文件：898.94 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for    External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Avai

文件：898.94 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

Vishay

威世

iscN-Channel MOSFET Transistor

文件：445.14 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET

文件：163.72 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS •

文件：212.84 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司